Past conferences

                                                                     wordle

This biennial conference series on "Extended Defects in Semiconductors" started with the "International Symposium on Dislocations in Tetrahedrally Coordinated Semiconductors in Hünfeld, Germany, in 1978. Subsequent meetings took place in France, Greece, Great Britain, Germany, Italy, Poland, and Russia. EDS conferences are known for excellent presentations and lively discussions in a stimulating scientific atmosphere. 

1978 Hünfeld (Germany)
          Dislocations in Tetrahedrally Coordinated Semiconductors (Inauguration     
          conference - "EDS 1")
          H. Alexander (Köln), P. Haasen (Göttingen), R. Labusch (Clausthal),
          W. Schröter (Göttingen)

1980 Krynica (Poland)
          Defect induced phenomena in Semiconductors ("EDS 2")
          J. Auleytner (Warszawa)

1983 Aussois (France)
          Properties and Structure of Dislocations in Semiconductors ("EDS 3")
          J. Philibert, B. Sieber, A. Zozime (Meudon-Bellevue)

1986 Zvenigorod (USSR)
          Structure and Properties of Dislocations in Semiconductors ("EDS 4")
          Yu. A. Osip'yan (Chernogolovka)

1988 Szczyrk (Poland)
         Defects in Crystals ("EDS 5")
         J. Auleytner, T. Figielski, E. Kaczmarek, E. Mizera, T.Wosinski (Warszawa)

1989 Oxford (UK)
          Structure and Properties of Dislocations in Semiconductors ("EDS 6")
          P. B. Hirsch, G. R. Booker, D. B. Holt, J. L. Hutchison, S. G. Roberts,
          P. R. Wilshaw (Oxford)

1992 Holzhau (Germany)
         Structure and Properties of Extended Defects in Semiconductors (EDS 7)
         P. Haasen (Göttingen), H. Alexander (Köln), J. Auleytner (Warszawa),
        J.Heydenreich (Halle), W. Schröter (Göttingen)

1996 Giens (France)
         Extended Defects in Semiconductors (EDS 8)
         B. Pichaud (Marseille), S. Pizzini (Milano), A. Cavallini (Bologna),
         G. Vanderschaeve (Toulouse)

1998 Jaszowiec (Poland)
          Extended Defects in Semiconductors (EDS 9)
          T. Figielski (Warszawa), W. Schröter (Göttingen)

2000 Brighton (UK)
          Extended Defects in Semiconductors (EDS 10)
          M. Heggie (Brighton)

2002 Bologna (Italy)
         Extended Defects in Semiconductors (EDS 11)
         A. Cavallini (Bologna), V. V. Kveder (Chernogolovka), S. Pizzini (Milano)

2004 Chernogolovka (Russia)
         Extended Defects in Semiconductors (EDS 12)
         Yu. A. Osip'yan, V. V. Kveder (Chernogolovka)

2006 Halle (Germany)
         Extended Defects in Semiconductors (EDS 13)
         H. S. Leipner (Halle), M. Kittler (Frankfurt/Oder)

2008 Poitiers (France)
         Extended Defects in Semiconductors (EDS 13)
         J. Rabier (Poitiers), E. Le Bourhis (Poitiers)

2010 Brighton (UK)
         Extended Defects in Semiconductors (EDS 15)
         M. Heggie (Brighton), M. Skowronski (Pittsburgh)

2012 Thessaloniki (Greece)
         Extended Defects in Semiconductors (EDS 16)
         Ph. Komninou

2014 Göttingen(Germany)
         Extended Defects in Semiconductors (EDS 17)
         M. Seibt (Göttingen), Martin Kittler (Cottbus-Senftenberg)

2016 Les Issambres (France)
         Extended Defects in Semiconductors (EDS 18)
         Marc Legros (Toulouse), Gabrielle Regula (Marseille)

 

 

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