Invited

Plenary Talks

Cor Claeys, KU Leuven, Belgium, Fellow IEEE & Fellow ECS
   “Are extended defects a show stopper for future III-V CMOS technologies?”

Joerg Neugebauer, Max-Planck-Institut für Eisenforschung, Düsseldorf, Germany
   "Understanding fundamental doping and stoichiometry limits in semiconductors by ab initio modelling"

Eva Olsson, Chalmers University of Technology, Gothenburg, Sweden
   “Defect and strain effects in semiconductors revealed by in situ electron microscopy”
 
Invited Talks

Konstantin Arutyunov, Moscow Institute of Electronics and Mathematics & Kapitza Institute for Physical Problems of the Russian Academy of Science, Moscow, Russia
  "Quasi-one-dimensional superconductivity"
 
Daniela Cavalcoli, University of Bologna, Italy
  "Optical and electrical characterization of ternary and quaternary GaN-based alloys"
 
Gregory Goltsman, Moscow State Pedagogical University, Russia
  “Disordered Superconducting NbN thin film as a material of choice for Single-Photon Detector for Quantum Photonic Integrated Circuits”
 
Fabien Massabuau, Cambridge Centre for Gallium Nitride, University of Cambridge, UK
  “Optical and structural properties of dislocations in InGaN”
 
Marie-Ingrid Richard, IM2NP UMR 7334 CNRS, Aix-Marseille University, France
  “An X-Ray investigation of extended defects: Quick Scanning X-Ray Microscopy and coherent diffraction imaging"
 
Julita Smalc-Koziorowska, Institute of High Pressure Physics PAS, Warsaw, Poland
  “Strain engineering and its implications for defect generation in InGaN/GaN structures grown by MOVPE”
 
Michaël Texier, Aix-Marseille University, France
  “Plastic behaviour and deformation mechanisms in nano-objects: the case of silicon”  
 
Yuki Tokumoto, Institute of Industrial Science, The University of Tokyo, Japan
   "Experimental investigation on dislocation conduction in topological insulators"
 
Hidekazu Tsuchida, Central Research Institute of Electric Power Industry, Kanagawa, Japan
  “Imaging and control of defects in 4H-SiC for high-voltage power devices”
 

 Philippe Vennéguès, Université Côte d'Azur, CRHEA-CNRS, Valbonne, France

  “Towards the Comprehension of Dislocations Generation in Epitaxially-grown (0001) Wurtzite Layers”

 
Thomas Walther, University of Sheffield, UK
  “Measuring Grain Boundary Segregation: tomographic APFIM vs analytical STEM revisited”
 
Andrei D. Zaikin, P.L. Kapitza Institute for Physical Problems, Moscow and Karlsruhe Institute of Technology (KIT), Germany
  “Novel Effects in Superconducting Hybrid Nanocircuits”
 

 

 

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